1 motorola tmos power mosfet transistor device data
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" " ! nchannel enhancementmode silicon gate the d 2 pak package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower r ds(on) capabilities. this high voltage mosfet uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading perfor- mance over time. in addition, this advanced tmos efet is designed to withstand high energy in the avalanche and commuta- tion modes. this new energy efficient design also offers a draintosource diode with a fast recovery time. designed for low voltage, high speed switching applications in power supplies, converters, pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ? robust high voltage termination ? avalanche energy specified ? sourcetodrain diode recovery time comparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperature ? short heatsink tab manufactured not sheared ? specifically designed leadframe for maximum power dissipation ? available in 24 mm 13inch/800 unit tape & reel, add t4 suffix to part number maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 500 vdc draintogate voltage (r gs = 1.0 m ) v dgr 500 vdc gatetosource voltage continuous gatetosource voltage nonrepetitive (tp 10 ms) v gs v gsm 20 40 vdc vpk drain current e continuous @ t c = 25 c drain current e continuous @ t c = 100 c drain current e single pulse (tp 10 s) i d i d i dm 8.0 5.0 32 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 125 1.0 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 25 vdc, v gs = 10 vdc, peak i l = 8.0 apk, l = 16 mh, r g = 25 ) e as 510 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (1) r jc r ja r ja 1.0 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 sec. t l 260 c (1) when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. efet and designer's are trademarks of motorola, inc. tmos is a registered trademark of motorola, inc. rev 1 order this document by mtb8n50e/d semiconductor technical data tmos power fet 8.0 amperes 500 volts r ds(on) = 0.8 ohm ? case 418b02, style 2 d 2 pak d s g ? motorola, inc. 1996
2 motorola tmos power mosfet transistor device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 500 e e 500 e e vdc mv/ c zero gate voltage drain current (v ds = 500 vdc, v gs = 0 vdc) (v ds = 400 vdc, v gs = 0 vdc, t j = 125 c) i dss e e e e 10 100 adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss e e 100 nadc on characteristics (1) gate threshold voltage (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 e 3.0 6.3 4.0 e vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 4.0 adc) r ds(on) e 0.6 0.8 ohms draintosource onvoltage (v gs = 10 vdc) (i d = 8.0 adc) (i d = 4.0 adc, t j = 125 c) v ds(on) e e e e 7.2 6.4 vdc forward transconductance (v ds = 15 vdc, i d = 4.0 adc) g fs 4.0 e e mhos dynamic characteristics input capacitance (v 25 vdc v 0 vdc c iss e 1450 1680 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss e 190 264 transfer capacitance f = 1 . 0 mhz) c rss e 45.4 144 switching characteristics (2) turnon delay time (r 9 1 ) t d(on) e 15 50 ns rise time (r gon =91 ) t r e 33 72 turnoff delay time (r gon = 9 . 1 ) t d(off) e 40 150 fall time t f e 32 60 gate charge (see figure 8) (v 400 vd i 8 0 ad q t e 40 64 nc (see figure 8) (v ds = 400 vdc, i d = 8.0 adc, q 1 e 8.0 e ( ds , d , v gs = 10 vdc) q 2 e 17 e q 3 e 17.3 e sourcedrain diode characteristics forward onvoltage v sd vdc (i s = 8.0 adc, v gs = 0 vdc) e 1.2 2.0 (i s = 8.0 adc, v gs = 0 vdc, t j = 125 c) e 1.1 e reverse recovery time (i 8 0 ad v 0 vd t rr e 320 e ns (i s = 8.0 adc, v gs = 0 vdc, t a e 179 e ( s , gs , di s /dt = 100 a/ s) t b e 141 e reverse recovery stored charge q rr e 3.0 e c internal package inductance internal drain inductance (measured from the drain lead 0.25 from package to center of die) l d e 4.5 e nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s e 7.5 e (1) pulse test: pulse width 300 s, duty cycle 2.0%. (2) switching characteristics are independent of operating junction temperature.
3 motorola tmos power mosfet transistor device data typical electrical characteristics 100 c 25 c t j = 55 c v ds , draintosource voltage (volts) figure 1. onregion characteristics v gs , gatetosource voltage (volts) figure 2. transfer characteristics i d , drain current (amps) figure 3. onresistance versus drain current and temperature i d , drain current (amps) figure 4. onresistance versus drain current and gate voltage t j , junction temperature ( c) figure 5. onresistance variation with temperature v ds , draintosource voltage (volts) figure 6. draintosource leakage current versus voltage r ds(on) , draintosource resistance (normalized) i dss , leakage (na) r ds(on) , draintosource resistance (ohms) 16 12 8.0 4.0 10 8.0 6.0 4.0 2.0 0 16 12 8.0 4.0 2.0 2.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.8 0.6 0.4 0.2 0 14 10 6.0 2.0 0 0.60 0 4.0 8.0 12 16 2.5 1.5 0.5 0 150 100 50 0 50 t j = 25 c 7 v 6 v 5 v i d , drain current (amps) v gs = 10 v 0 4.0 8.0 12 16 2.0 6.0 10 14 0 100 300 500 200 400 0 2.0 1.0 100,000 1,000 10 1.0 10,000 100 14 12 8 v i d , drain current (amps) 0.55 0.70 0.65 0.75 0.85 0.80 t j = 25 c v gs = 10 v 15 v 1.6 1.2 1.0 r ds(on) , draintosource resistance (ohms) v gs = 10 v t j = 100 c 25 c 55 c 125 75 25 25 v gs = 10 v i d = 8 a v gs = 0 v t j = 125 c 25 c 100 c v ds 10 v 3.0 3.5 14 10 6.0 2.0 1.4 0.90
4 motorola tmos power mosfet transistor device data typical electrical characteristics gatetosource or draintosource voltage (volts) figure 7. capacitance variation draintosource voltage (volts) figure 8. high voltage capacitance variation q g , total gate charge (nc) figure 9. gatetosource and draintosource voltage versus total charge r g , gate resistance (ohms) figure 10. resistive switching time variation versus gate resistance v sd , sourcetodrain voltage (volts) figure 11. diode forward voltage versus current v ds , draintosource voltage (volts) figure 12. maximum rated forward biased safe operating area i s , source current (amps) i d , drain current (amps) v c, capacitance (pf) t, time (ns) 4000 3000 2000 1000 20 10 5.0 0 5.0 10 10,000 1,000 100 10 100 1000 8.0 6.0 4.0 2.0 0 32 24 16 8.0 0 1000 100 10 1.0 10 100 6.0 2.0 0 0.9 0.8 0.7 0.6 0.5 c, capacitance (pf) 10 40 0.1 1.0 10 100 1000 0 8.0 4.0 100 10 0.1 0.01 1.0 15 25 12 10 , gatetosource voltage (volts) gs 1.3 1.2 1.1 1.0 t j = 25 c v gs = 0 v r ds(on) limit thermal limit package limit v gs = 20 v single pulse t c = 25 c 100 s dc 10 ms 1 ms 10 s t j = 25 c i d = 8 a v dd = 250 v v gs = 10 v t d(off) t r t d(on) v gs = 0 v t j = 25 c c iss c oss c rss v ds = 0 v v gs = 0 v c iss c iss c rss c rss c oss t j = 25 c v gs v ds 400 300 200 100 0 v ds , draintosource voltage (volts) t j = 25 c i d = 8 a v ds v gs q2 q1 qt q3 t f
5 motorola tmos power mosfet transistor device data figure 13. maximum avalanche energy versus starting junction temperature e t j , starting junction temperature ( c) 150 25 600 0 100 200 50 100 75 125 300 400 500 i d = 8 a , single pulse draintosource as avalanche energy (mj) figure 14. thermal response r(t), normalized effective transient thermal resistance t, time (seconds) 1.0 0.01 d = 0.5 0.05 0.01 single pulse 0.00001 0.02 0.1 0.0001 0.001 0.01 1.0 10 0.1 0.2 0.1
6 motorola tmos power mosfet transistor device data package dimensions case 418b02 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. gate 2. drain 3. source 4. drain seating plane b s g d t m 0.13 (0.005) t 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 mtb8n50e/d ?
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